Techniques for improving leakages and row hammer failure in nano-scale dram transistor

By: Gautam, Satendra KumarContributor(s): Manhas, Sanjeev Kumar, SupervisorMaterial type: TextTextPublication details: Roorkee Indian Institute of Technology Roorkee 2021Description: xxii, 120pSubject(s): Dynamic-random-access-memory, Gate-induced-drain-leakage, Dram Transistor, Passing word line Hammer
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Item type Current library Shelving location Call number Status Date due Barcode
Thesis Thesis Mahatma Gandhi Central Library
Reference Available G29734

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